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Published February 15, 2015 | metadata_only
Journal Article

High temperature transport properties of BaZn_2Sn_2


BaZn_2Sn_2 (space group P4/nmm, a = 4.7459(5) Å, c = 11.330(2) Å, Z = 2) crystallizes in the CaBe_2Ge_2 structure type with a polyanionic framework comprising alternately stacked PbO-like {ZnSn_(4/4)} and anti-PbO-like {SnZn_(4/4)} layers along the c-axis. BaZn_2Sn_2 samples were obtained by either direct solid state reaction of the elements or from a Sn-flux method in very high yield with very small amount of β-Sn as the secondary phase. The samples were characterized by powder X-ray diffraction (PXRD) and scanning electron microscopy (SEM). The chemical compositions were determined to be off-stoichiometric with Zn/Sn ratio lower than 1.0 and Sn_2 atoms in the crystal structure were found to be either loosely bonded or not bonded which might lead to an incomplete charge balance. Electrical and thermal transport measurements have been performed in the temperature range 300–773 K. BaZn_2Sn_2 displays the electrical resistivity of a metal (or semimetal) along with very low Seebeck coefficients and relatively high thermal conductivity.

Additional Information

© 2014 Elsevier B.V. Received 24 July 2014; Received in revised form 22 September 2014; Accepted 18 October 2014; Available online 27 October 2014 U. Aydemir acknowledges the financial assistance of The Scientific and Technological Research Council of Turkey. This research was partially carried out at the Jet Propulsion Laboratory, California Institute of Technology, under a contract with the National Aeronautics and Space Administration and was supported by the NASA Science Missions Directorate's Radioisotope Power Systems Technology Advancement Program.

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August 22, 2023
August 22, 2023