Reaction of amorphous Ni-W and Ni-N-W films with substrate silicon
- Creators
- Zhu, M. F.
- Suni, I.
- Nicolet, M.-A.
- Sands, T.
Abstract
Amorphous films of Ni-W and Ni-N-W were deposited on single-crystal silicon with discharge gases of Ar or Ar+N2 by rf cosputtering of Ni and W. The reaction of these Ni-W and Ni-N-W films with the Si substrate were studied in the temperature range of 450–750 °C by a combination of backscattering spectrometry, x-ray diffraction, cross-sectional transmission electron microscopy, and resistivity measurements. Films with composition Ni36W64 are stable below 500 °C. NiSi and NiSi2 form at 500 °C, and WSi2 forms rapidly in the temperature range of 625–650 °C. The nickel silicide forms adjacent to and within the silicon, while the outer layer becomes a mixture of WSi2 and NiSi2. The morphologies of the reacted layers are revealed by cross-sectional transmission electron microscopy. The crystallization temperature of amorphous Ni36W64 films on SiO2 is near 650 °C also. Adding nitrogen to form amorphous Ni30N21W49 films lowers the crystallization temperature, but raises the reaction temperature with Si to 750 °C.
Additional Information
Copyright © 1984 American Institute of Physics (Received 2 April 1984; accepted 19 June 1984) The authors would like to thank Dr. M. Van Rossum and Eric T.-S. Pan for x-ray diffractions. One of the authors (T.S.) wishes to acknowledge Professor J. Washburn, Professor R. Gronsky, and Dr. J. Mazur of Lawrence Berkeley Laboratory, University of California, Berkeley, for useful discussions. The completion of this work was financially supported at Caltech by the National Aeronautics and Space Administration and monitored by the Jet Propulsion nLaboratory, California Institute of Technology (D. Burger).Files
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Additional details
- Eprint ID
- 1208
- Resolver ID
- CaltechAUTHORS:ZHUjap84
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2006-01-04Created from EPrint's datestamp field
- Updated
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2021-11-08Created from EPrint's last_modified field