Magnetotransport and magnetocrystalline anisotropy in Ga1-xMnxAs epilayers
- Creators
- Tang, H. X.
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Roukes, M. L.
Abstract
We present an analysis of the magnetic anisotropy in epitaxial Ga1-xMnxAs thin films through electrical transport measurements on multiterminal microdevices. The film magnetization is manipulated in 3D space by a three-axis vector magnet. Anomalous switching patterns are observed in both longitudinal and transverse resistance data. In transverse geometry in particular we observe strong interplay between the anomalous Hall effect and the giant planar Hall effect. This allows direct electrical characterization of magnetic transitions in the 3D space. These transitions reflect a competition between cubic magnetic anisotropy and an effective out-of-plane uniaxial anisotropy, with a reversal mechanism that is distinct from the in-plane magnetization. The uniaxial anisotropy field is directly calculated with high precision and compared with theoretical predictions.
Additional Information
© Institute of Physics and IOP Publishing Limited 2007. Received 22 September 2006, in final form 11 December 2006, Published 6 April 2007, Print publication: Issue 16 (23 April 2007) We acknowledge support from DARPA under grants DSO/SPINS-MDA 972-01-1-0024.Attached Files
Published - TANjpcm07.pdf
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Additional details
- Eprint ID
- 8070
- Resolver ID
- CaltechAUTHORS:TANjpcm07
- Defense Advanced Research Projects Agency (DARPA)
- MDA 972-01-1-0024
- Created
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2007-07-23Created from EPrint's datestamp field
- Updated
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2022-07-12Created from EPrint's last_modified field