Welcome to the new version of CaltechAUTHORS. Login is currently restricted to library staff. If you notice any issues, please email coda@library.caltech.edu
Published May 1997 | Published
Book Section - Chapter Open

On the Link Between Electron Shadowing And Charging Damage

Abstract

Charging and topography evolution simulations during plasma etching of high aspect ratio line-and-space patterns reveal that electron shadowing of the sidewalls critically affects charging damage. Decreasing the degree of electron shadowing by using thinner masks decreases the potentials of the etched features with a concomitant reduction in catastrophic tunneling currents through underlying thin gate oxides. Simultaneously, the potential distribution in the trench changes, significantly perturbing the local ion dynamics which, in turn, cause the notching effect to worsen. Since the latter can be reduced independently by selecting an appropriate etch chemistry, the use of thinner (hard) masks is predicted to be advantageous for the prevention of gate oxide failure.

Additional Information

© 1997 American Vacuum Society.

Attached Files

Published - 00596692.pdf

Files

00596692.pdf
Files (508.5 kB)
Name Size Download all
md5:e8f0e6b7fc5818f1411b095b65e41a7b
508.5 kB Preview Download

Additional details

Created:
August 19, 2023
Modified:
October 25, 2023