Published September 1999
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Journal Article
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Thermal reaction of Pt film with 110 GaN epilayer
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Abstract
Backscattering spectrometry, x-ray diffractometry, and scanning electron microscopy have been used to study the reaction of a thin Pt film with an epilayer of [110] GaN on [110] sapphire upon annealing at 450, 550, 650, 750, and 800 degrees C for 30 min. A Ga concentration of 2 at. % is detected by MeV He-4(++) backscattering spectrometry in the Pt layer at 550 degrees C. By x-ray diffraction, structural changes are observed already at 450 degrees C. At 650 OC, textured Ga2Pt appears as reaction product. The surface morphology exhibits instabilities by the formation of blisters at 650 degrees C and voids at 800 degrees C.
Additional Information
©1999 American Vacuum Society. Received 26 February 1999; accepted 25 June 1999. The authors gratefully acknowledge financial support from the Center for Integrated Space Microsystems at JPL/NASA. Their gratitude also goes to Dr. Alex Dommann, Neu-Technikum Buchs, Switzerland, who supplied the GaN substrate, and helped them completing and interpreting the Read camera measurements. They also thank Rob Gorris and Mike Easterbrook for their technical assistance.Files
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- 3374
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- CaltechAUTHORS:GASjvsta99
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2006-06-02Created from EPrint's datestamp field
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2021-11-08Created from EPrint's last_modified field