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Published February 2009 | public
Journal Article

PlasMOStor: A metal-oxide-Si field effect plasmonic modulator


Realization of chip-based all-optical and optoelectronic computational networks will require ultracompact Si-compatible modulators, ideally comprising dimensions, materials, and functionality similar to electronic complementary metal−oxide−semiconductor (CMOS) components. Here we demonstrate such a modulator, based on field-effect modulation of plasmon waveguide modes in a MOS geometry. Near-infrared transmission between an optical source and drain is controlled by a gate voltage that drives the MOS into accumulation. Using the gate oxide as an optical channel, electro-optic modulation is achieved in device volumes of half of a cubic wavelength with femtojoule switching energies and the potential for gigahertz modulation frequencies.

Additional Information

© 2009 American Chemical Society. Received December 22, 2008; Revised Manuscript Received January 5, 2009. This research was supported by the AFOSR under Grants FA9550-06-1-0480 and FA9550-04-1-0434. We also acknowledge use of facilities of the Center for Science and Engineering of Materials and of the NSF MRSEC. We thank G. deRose, M. Kelzenberg, C. Hofmann, H. Lezec, D. Pacifici, O. Painter, A. Polman, and E. Verhagen for engaging discussions and technical assistance. Special thanks are given to R. Briggs for assistance with membrane fabrication and R. Walters for data collection software and assistance with infrared optical testing. J.A.D. acknowledges support from the NSF and an NDSEG fellowship administered by the Army Research Office.

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