CaltechAUTHORS
Published September 27, 2004 | Version Published
Journal Article Open

Silicon optical nanocrystal memory

Creators

  • 1. ROR icon California Institute of Technology
  • 2. ROR icon Intel (United States)

Abstract

We describe the operation of a silicon optical nanocrystal memory device. The programmed logic state of the device is read optically by the detection of high or low photoluminescence intensity. The suppression of excitonic photoluminescence is attributed to the onset of fast nonradiative Auger recombination in the presence of an excess charge carrier. The device can be programmed and erased electrically via charge injection and optically via internal photoemission. Photoluminescence suppression of up to 80% is demonstrated with data retention times of up to several minutes at room temperature.

Additional Information

© 2004 American Institute of Physics. Received 19 January 2004; accepted 22 July 2004. This work was supported by Intel Corporation and NASA. One of the authors (R.J.W.) gratefully acknowledges NDSEG Fellowship support through the Army Research Office.

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Additional details

Identifiers

Eprint ID
1936
Resolver ID
CaltechAUTHORS:WALapl04

Funding

Intel
NASA
National Defense Science and Engineering Graduate (NDSEG) Fellowship
Army Research Office (ARO)

Dates

Created
2006-02-24
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Updated
2021-11-08
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