A novel technique for the direct determination of carrier diffusion lengths in GaAs/AlGaAs heterostructures using cathodoluminescence
A new technique for determining carrier diffusion lengths in direct gap semiconductors by cathodoluminescence measurement is presented. Ambipolar diffusion lengths are determined for GaAs quantum well material, bulk GaAs, and Al_xGa_(1-x)As with x up to 0.38. A large increase in the diffusion length is found as x approaches 0.38 and is attributed to an order of magnitude increase in lifetime.
Additional Information© 1989 IEEE. Date of Current Version: 06 August 2002. The authors would like to acknowledge the support of the Office of Naval research and the SDIO-ISTC. One of us (P.S.) would like to acknowledge the support of a graduate NSF fellowship.
Published - SERiedm89.pdf