Welcome to the new version of CaltechAUTHORS. Login is currently restricted to library staff. If you notice any issues, please email coda@library.caltech.edu
Published March 2006 | public
Journal Article

Circuit Fabrication at 17 nm Half-Pitch by Nanoimprint Lithography


High density metal cross bars at 17 nm half-pitch were fabricated by nanoimprint lithography. Utilizing the superlattice nanowire pattern transfer technique, a 300-layer GaAs/AlGaAs superlattice was employed to produce an array of 150 Si nanowires (15 nm wide at 34 nm pitch) as an imprinting mold. A successful reproduction of the Si nanowire pattern was demonstrated. Furthermore, a cross-bar platinum nanowire array with a cell density of approximately 100 Gbit/cm^2 was fabricated by two consecutive imprinting processes.

Additional Information

© 2006 American Chemical Society. Received 26 October 2005. Published online 4 February 2006. Published in print 1 March 2006. This research was supported in part by the Defense Advanced Research Projects Agency (DARPA) and through a subcontract from Mitre Corp.

Additional details

August 19, 2023
October 26, 2023