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Published June 1995 | Version Published
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A 100-Element MODFET Grid Amplifier

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Abstract

A 100-element quasi-optical amplifier is presented. The active devices are custom-fabricated modulation-doped field-effect transistors (MODFETs). Common-mode oscillations were suppressed using resistors in the input gate leads. The grid has 9 dB of gain at 10.1 GHz. The 3-dB bandwidth is 1.2 GHz. We present a model for the gain of the grid versus frequency and compare measurement with theory.

Additional Information

© 1995 IEEE. Date of Current Version: 06 August 2002. This research was supported by the Army Research Office and a grant from Martin Marietta Laboratories. M.P. DeLisio holds an NSF fellowship. The authors are grateful to Martin Marietta Laboratories for supplying the differential-pair chips. Furthermore, we would like to thank Dr. S. Weinreb, Dr. S. Duncan, and Dr. N. Byer of Martin Marietta Laboratories for their suggestions and support.

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29356
Resolver ID
CaltechAUTHORS:20120217-100159654

Funding

Army Research Office (ARO)
Martin Marietta Laboratories

Dates

Created
2012-02-17
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Updated
2021-11-09
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5188810