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Published May 1, 2009 | Published
Journal Article Open

Electrically pumped hybrid evanescent Si/InGaAsP lasers


Hybrid Si/III-V, Fabry-Perot evanescent lasers are demonstrated, utilizing InGaAsP as the III-V gain material for the first time to our knowledge. The lasing threshold current of 300-μm-long devices was as low as 24 mA, with a maximal single facet output power of 4.2 mW at 15°C. Longer devices achieved a maximal single facet output power as high as 12.7 mW, a single facet slope efficiency of 8.4%, and a lasing threshold current density of 1 kA/cm^2. Continuous wave laser operation was obtained up to 45°C. The threshold current density, output power, and efficiency obtained improve upon those of previously reported devices having a similar geometry. Facet images indicate that the output light is largely confined to the Si waveguide.

Additional Information

© 2009 Optical Society of America. Received January 22, 2009; revised March 16, 2009; accepted March 26, 2009; posted March 30, 2009 (Doc. ID 106493); published April 21, 2009. This work was supported by Defense Advanced Research Projects Agency (DARPA) contracts N66001- 07-1-2058 and HR0011-04-1-0054, the U.S. Air Force Office of Scientific Research (AFOSR) Grant FA9550- 06-1-0480, and the Center for Science and Engineering of Materials, a National Science Foundation (NSF) Materials Research Science and Engineering Center at Caltech. The authors thank the Kavli Nano-Institute, Caltech, for supporting fabrication. A. Zadok acknowledges postdoctoral fellowships from the Center for the Physics of Information, Caltech, and the Rothschild fellowship from Yad-Hanadiv Foundation, Israel. M. J. Shearn thanks the NSF Graduate Research Fellowship program. OCIS codes: 250.5960, 250.5300.

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