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Published 1969 | Published + Updated
Book Section - Chapter Open

Physics of Interfaces


It has long been known that when a metal is placed in contact with a semiconductor a rectifying contact often results. This rectification is a result of an energy barrier between the metal and the semiconductor. In order to form a nonrectifying or ohmic contact, two general approaches can be applied: either (1) the barrier energy can be reduced to a low enough value that the thermally excited current over the barrier is large enough for the application involved or (2) the semiconductor can be doped to a high carrier density to allow quantum mechanical tunneling to take place. The physical principles of these processes are discussed in this article.

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© 1969 Electrochemical Society. Updated version April 1, 2016.

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Published - 390834.pdf

Updated - PhysicsOfInterfaces1.pdf

Updated - Physics_of_Interfaces.pdf


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