Published 1969
| Published + Updated
Book Section - Chapter
Open
Physics of Interfaces
- Creators
- Mead, C. A.
- Other:
- Schwartz, Bertram
Abstract
It has long been known that when a metal is placed in contact with a semiconductor a rectifying contact often results. This rectification is a result of an energy barrier between the metal and the semiconductor. In order to form a nonrectifying or ohmic contact, two general approaches can be applied: either (1) the barrier energy can be reduced to a low enough value that the thermally excited current over the barrier is large enough for the application involved or (2) the semiconductor can be doped to a high carrier density to allow quantum mechanical tunneling to take place. The physical principles of these processes are discussed in this article.
Additional Information
© 1969 Electrochemical Society. Updated version April 1, 2016.Attached Files
Published - 390834.pdf
Updated - PhysicsOfInterfaces1.pdf
Updated - Physics_of_Interfaces.pdf
Files
390834.pdf
Additional details
- Eprint ID
- 55116
- Resolver ID
- CaltechAUTHORS:20150223-144739659
- Created
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2015-02-23Created from EPrint's datestamp field
- Updated
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2019-10-03Created from EPrint's last_modified field