Published June 1987 | Version Published
Book Section - Chapter Open

Diode-grids for millimeter-wave phase-shifters and frequency doublers

Abstract

Diode-grids have been fabricated on 2-cm square monolithic gallium-arsenide wafers with 1600 Schottky varactor-diodes. A computer-controlled reflectometer that uses a wave-front division interference technique was developed to measure the reflection coefficient of the diode-grids. A 70° phase shift with a 6-dB loss was obtained at 93 GHz when the bias on the diode-grid was changed from -3V to +1V. A second harmonic conversion efficiency of 16% and an output power of 0.5 W was obtained at 66 GHz when the diode-grid was pumped with a pulsed magnetron at 33 GHz.

Additional Information

© 1987 IEEE. This work was supported by the Army Research Office, the U.S. Army Harry Diamond Laboratory, the Jet Propulsion Laboratory, and by TRW under the University of California MICRO program. Wayne Lam acknowledges the support of an AMOCO Foundation Fellowship.

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Identifiers

Eprint ID
79172
Resolver ID
CaltechAUTHORS:20170718-170710700

Funding

Army Research Office (ARO)
U. S. Army Harry Diamond Laboratory
JPL
TRW
AMOCO Foundation

Dates

Created
2017-07-19
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Updated
2021-11-15
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