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Published April 1973 | Published
Journal Article Open

The influence of interface states on incomplete charge transfer in overlapping gate charge-coupled devices


A simple and accurate model is used to estimate the incomplete charge transfer due to interface states trapping in the overlapping gate charge-coupled devices. It is concluded that trapping in the interface states under the edges of the gates parallel to the active channel limits the performance of the devices at moderate and low frequencies. The influence of the device parameters, dimensions, and clocking waveforms on the signal degradation is discussed. It is shown that increasing the clock voltages, reduces the incomplete charge transfer due to interface state trapping.

Additional Information

© 1973 IEEE. Manuscript received October 23, 1972. This work was supported in part by the Office of Naval Research (A. Shostak) and the Naval Research Laboratory (D. F. Barbe).

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