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Published October 1, 1976 | public
Journal Article Open

HgSe, a highly electronegative stable metallic contact for semiconductor devices


Schottky barriers formed by the highly electronegative substance HgSe on n-ZnS and on n-ZnSe have been characterized by capacitance-voltage and photoresponse measurements. The barriers are about 0.5 eV greater than Au barriers on these n-type substrates. HgSe contacts are stable under ambient conditions and are easily fabricated, making them attractive for device use.

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Copyright © 1976 American Institute of Physics Received 17 June 1976


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