Electron and Hole Dynamics in Silicon-Germanium Alloy Measured by Attosecond XUV Transient Absorption

Creators: Zürch, M.; Borja, L. J.; Chang, H.-T.; Kraus, P. M.; Cushing, S.; Kaplan, C. J.; Gandman, A.; Prell, J. S.; Pemmaraju, C. D.; Prendergast, D.; Neumark, D.; Leone, S. R.

Abstract

Electron-hole dynamics is measured by attosecond transient absorption in silicon-germanium alloy. The germanium atoms act as reporter atoms by time-dependent probing the M_(4,5)-edge, revealing electron and hole dynamics, as well as a new midgap feature.

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Resource type: Book Section - Chapter
Publisher: Optical Society of America
Imprint: International Conference on Ultrafast Phenomena 2016, Art. No. UM1A.5. Washington, DC. ISBN: 978-1-943580-18-7.
Conference: International Conference on Ultrafast Phenomena 2016 , Santa Fe, NM, 17-22 July 2016

Created:: August 20, 2023
Modified:: October 18, 2023