Decoupling Edge Versus Bulk Conductance in the Trivial Regime of an InAs/GaSb Double Quantum Well Using Corbino Ring Geometry
A Corbino ring geometry is utilized to analyze edge and bulk conductance of InAs/GaSb quantum well structures. We show that edge conductance exists in the trivial regime of this theoretically predicted topological system with a temperature-insensitive linear resistivity per unit length in the range of 2 kΩ/μm. A resistor network model of the device is developed to decouple the edge conductance from the bulk conductance, providing a quantitative technique to further investigate the nature of this trivial edge conductance, conclusively identified here as being of n type.
Additional Information© 2016 American Physical Society. Received 2 May 2016; published 12 August 2016. This work was partially supported by Microsoft Station Q, the Netherlands Foundation for Fundamental Research on Matter (FOM), the Danish National Research Foundation, and the European Commission through the Marie Curie Fellowship Program.
Published - PhysRevLett.117.077701.pdf
Submitted - 1605.04818.pdf
Supplemental Material - Trivial_edge_conductance-Supporting_Information_v5-clean.pdf