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Published November 1998 | public
Journal Article Open

Fabrication of high-density nanostructures by electron beam lithography


We demonstrate a fabrication method to define high-density, uniform nanostructures by electron beam lithography at conventional beam voltages (< 40 kV). Here we optimize the exposure and development conditions needed to generate such nanostructure arrays using polymethylmethacrylate as positive resist and isopropyl alcohol as a developer. Arrays of 12 nm dots with 25 nm period and 20 nm lines with 40 nm period were fabricated to show the resolution of this optimized process.

Additional Information

©1998 American Vacuum Society. (Received 29 May 1998; accepted 29 September 1998) This work was supported by the Army Research Office and the National Science Foundation, which are gratefully acknowledged.


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