Published June 15, 1983
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Journal Article
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Direct measurement of the carrier leakage in an InGaAsP/InP laser
Abstract
Carrier leakage over the heterobarrier in an InGaAsP/InP laser is measured directly in a laser-bipolar-transistor structure. Experimental results indicate a significant amount of carrier leakage under normal laser operating conditions.
Additional Information
Copyright © 1983 American Institute of Physics. Received 6 December 1982; accepted 15 February 1983. This work was supported by Office of Naval Research and the National Science Foundation.Files
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- 9902
- Resolver ID
- CaltechAUTHORS:CHEapl83a
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2008-03-26Created from EPrint's datestamp field
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2021-11-08Created from EPrint's last_modified field