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Published April 7, 2004 | Supplemental Material
Journal Article Open

Synthesis of Polymer Dielectric Layers for Organic Thin Film Transistors via Surface-Initiated Ring-Opening Metathesis Polymerization


The use of surface-initiated ring-opening metathesis polymerization (SI-ROMP) for producing polymer dielectric layers is reported. Surface tethering of the catalyst to Au or Si/SiO_2 surfaces is accomplished via self-assembled monolayers of thiols or silanes containing reactive olefins. Subsequent SI-ROMP of norbornene can be conducted under mild conditions. Pentacene semiconducting layers and gold drain/source electrodes are deposited over these polymer dielectric films. The resulting field effect transistors display promising device characteristics, demonstrating for the first time that SI-ROMP can be used in the construction of organic thin-film electronic devices.

Additional Information

© 2004 American Chemical Society. Received 24 April 2003. Published online 12 March 2004. Published in print 1 April 2004. We thank the NSF, ONR, NJCOOE, and Lucent Technologies for financial support, and Dr. B. Connell and D. P. Sanders for advice on this manuscript.

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Supplemental Material - ja035773csi20031211_090132.pdf


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