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Published March 15, 1970 | public
Journal Article

Influence of carrier diffusion effects on window thickness of semiconductor detectors


Carrier diffusion effects within the depletion region can have a large influence in determining the window thickness x_w of surface barrier detectors. If the surface is assumed to be a perfect sink, carrier diffusion (against the drift field) to the surface leads to x_w ≈ kT/qE where E is the field at the surface. Calculated values of x_w are in reasonable agreement with previously published values of window thicknesses. Surface preparation techniques can influence the amount of charge lost, as can plasma erosion times.

Additional Information

© 1970 North-Holland Publishing. Received 3 October 1969. The authors wish to sincerely thank Dr. T. C. McGill for suggestions concerning the computations and Drs. N. G. E. Johansson and O. Meyer for helpful discussions concerning interpretations of the results. The authors are especially grateful to Dr. P. Siffert for access to unpublished data.

Additional details

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