Welcome to the new version of CaltechAUTHORS. Login is currently restricted to library staff. If you notice any issues, please email coda@library.caltech.edu
Published October 10, 2012 | public
Book Section - Chapter

Thin, free-standing Cu_2O substrates via thermal oxidation for photovoltaic devices


Cu_2O is a promising, earth-abundant alternative to traditional photovoltaic materials (CIGS, CdTe, etc.) because of its low cost, high availability, and straightforward processing. We report a method to fabricate Cu_2O substrates with thicknesses of less than 20 microns which may be handled and processed into devices. Development of thinner Cu_2O substrates is essential as extrinsic doping has been impossible thus far, and intrinsic Cu_2O is highly resistive. Hall measurements indicate that the substrates had Hall mobilities of 10–20 cm^2V^(−1)s^(−1) and carrier concentrations on the order of 10^(14) cm^(−3). Current-voltage characteristics of these Cu_2O substrates were derived from liquid junction Schottky barrier device measurements which indicate open circuit voltages of Voc ∼ 600 mV.

Additional Information

© 2011 IEEE. Date of Current Version: 04 October 2012. The authors acknowledge The Dow Chemical Company for funding and collaborating in this work.

Additional details

August 19, 2023
October 19, 2023