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Published July 1978 | Version Published
Journal Article Open

Theoretical studies of Si and GaAs surfaces and initial steps in the oxidation

Creators

  • 1. ROR icon California Institute of Technology

Abstract

Using ab initio quantum chemical methods (generalized valence bond), we examine (i) the electronic states of Si (111) and GaAs (110) surface, (ii) the relaxation of the Si (111) surface, (iii) the reconstruction of the GaAs surface, (iv) the initial steps in the chemisorption of O_2 on Si (111), and (v) the bonding of O atom to Ga and As centers.

Additional Information

© 1978 American Vacuum Society. Received 25 April 1978. The authors gratefully acknowledge useful discussions with Professors W. E. Spicer, P. Mark, and R. S. Bauer. One of us (TCM) would like to acknowledge the support of the Alfred P. Sloan Foundation. This work (Contribution No. 5770) was supported in part by a grant from the Director's Discretionary Fund of the Jet Propulsion Laboratory and by a grant from the National Science Foundation (DMR74-04965).

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Identifiers

Eprint ID
32776
Resolver ID
CaltechAUTHORS:20120727-154434637

Funding

Alfred P. Sloan Foundation
JPL Director's Discretionary Fund
NSF
DMR74-04965

Dates

Created
2012-07-30
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Updated
2021-11-09
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Caltech Custom Metadata

Other Numbering System Name
WAG
Other Numbering System Identifier
0120