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Published March 7, 1988 | public
Journal Article Open

Parasitic-free measurement of the fundamental frequency response of a semiconductor laser by active-layer photomixing


We report the measurement of the fundamental (intrinsic) frequency response of a GaAs semiconductor laser to 12 GHz by directly photomixing two optical sources in the active region of the laser. This novel technique reveals the underlying fundamental frequency response of the device as parasitic effects are avoided. Well beyond the relaxation resonance, the theoretically predicted 40 dB/dec signal rolloff is observed. Other features of the measured response function are also observed to be the theoretical ideal.

Additional Information

Copyright © 1988 American Institute of Physics. Received 7 December 1987; accepted 4 January 1988. This work was supported by the National Science Foundation, the Powell Foundation, and AT&T Bell Laboratories. The authors are grateful for stimulating conversations with Joel Paslaski.


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