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Published April 1998 | Published
Journal Article Open

Photonic microstructures as laser mirrors


Deeply etched 1-D third-order Bragg reflectors have been used as mirrors for broad-area semiconductor lasers operating at 975-nm wavelength. From a threshold and efficiency analysis, we determine the mirror reflectivity to be approximately 95%. The design of the GaAs-based laser structure features three InGaAs quantum wells placed close (0.5 μm) to the surface in order to reduce the required etch depth and facilitate high-quality etching. Despite the shallow design and the proximity of the guided mode to the metal contact, the threshold current density (J_(th) = 220 A/cm^2 for infinite cavity length) and internal loss (α_i = 9±1 cm^(−1)) are very low.

Additional Information

© 1998 Society of Photo-Optical Instrumentation Engineers. Paper INT-04 received Aug. 19, 1997; revised manuscript received Oct. 21, 1997; accepted for publication Oct. 27, 1997. T.F.K. gratefully acknowledges support by the Royal Society of the UK. The work was funded through DARPA, the Army Research Office under contract DAAH04-96-1-0389, and the NSF under contract ECS-9632937.

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