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Published February 28, 2005 | public
Journal Article Open

Erbium-doped and Raman microlasers on a silicon chip fabricated by the sol–gel process


We report high-Q sol–gel microresonators on silicon chips, fabricated directly from a sol–gel layer deposited onto a silicon substrate. Quality factors as high as 2.5×10^7 at 1561 nm were obtained in toroidal microcavities formed of silica sol–gel, which allowed Raman lasing at absorbed pump powers below 1 mW. Additionally, Er3+-doped microlasers were fabricated from Er3+-doped sol–gel layers with control of the laser dynamics possible by varying the erbium concentration of the starting sol–gel material. Continuous lasing with a threshold of 660 nW for erbium-doped microlaser was also obtained.

Additional Information

©2005 American Institute of Physics (Received 23 April 2004; accepted 26 January 2005; published online 25 February 2005) This work was supported by the Defense Advanced Research Project Agency, the National Science Foundation, and the Caltech Lee Center.


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