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Published February 13, 1989 | public
Journal Article Open

Low-temperature measurement of the fundamental frequency response of a semiconductor laser by active-layer photomixing


We use the active-layer photomixing technique to directly modulate the output of a GaAs semiconductor laser operating at temperatures as low as 4.2 K. The technique produces modulation with nearly perfect immunity to device parasitic effects, revealing the laser diode's intrinsic modulation response. At 4.2 K the parasitic corner frequency is estimated to be 410 MHz, yet the response appears ideal out to 15 GHz. We measure the dynamical parameters governing the response function, the relaxation resonance frequency, and the damping rate, and discuss their low-temperature behavior.

Additional Information

© 1989 American Institute of Physics. Received 7 October 1988; accepted 4 December 1988. This work is supported by the National Science Foundation, the Powell Foundation, and ATT Corporation. One of us (MAN) is grateful for financial support from IBM Corporation.


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