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Published March 15, 1975 | public
Journal Article Open

Gamma–ray spectroscopy with single–carrier collection in high–resistivity semiconductors


With the standard plane–parallel configuration of semiconductor detectors, good γ–ray spectra can only be obtained when both electrons and holes are completely collected. We show by calculations (and experiments) that with contacts of hemispherical configuration one can obtain γ–ray spectra of adequate resolution and with signal heights of nearly full amplitude even when only one type of carrier is collected. Experiments with CdTe detectors for which the µτ product for electrons is about 10^(3) times that of the holes confirm these calculations. The adoption of hemispherical contacts thus widens the range of high–resistivity semiconductors potentially acceptable for γ–ray detection at room temperature.

Additional Information

© 1975 American Institute of Physics. Received 2 December 1974. Work supported in part by the AEC (H. Wasson) through funds administered by the UCLA School of Nuclear Medicine (G. Huth).


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