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Published September 3, 2007 | Published + Supplemental Material
Journal Article Open

Growth of vertically aligned Si wire arrays over large areas (>1 cm^2) with Au and Cu catalysts


Arrays of vertically oriented Si wires with diameters of 1.5 µm and lengths of up to 75 µm were grown over areas >1 cm^2 by photolithographically patterning an oxide buffer layer, followed by vapor-liquid-solid growth with either Au or Cu as the growth catalyst. The pattern fidelity depended critically on the presence of the oxide layer, which prevented migration of the catalyst on the surface during annealing and in the early stages of wire growth. These arrays can be used as the absorber material in novel photovoltaic architectures and potentially in photonic crystals in which large areas are needed.

Additional Information

© 2007 American Institute of Physics. (Received 18 July 2007; accepted 12 August 2007; published online 5 September 2007) This work was supported by BP, the Department of Energy, Office of Basic Energy Sciences, and the Center for Science and Engineering of Materials, an NSF Materials Research Science and Engineering Center at Caltech.

Attached Files

Published - KAYapl07.pdf

Supplemental Material - KAYapl07readme.txt

Supplemental Material - KAYapl07supp.pdf


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