Published March 1, 1983
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InGaAsP/InP undercut mesa laser with planar polyimide passivation
Abstract
An undercut mesa laser is fabricated on an n + -InP substrate using a single step liquid phase epitaxy growth process and a planar structure is obtained by using a polyimide filling layer. The lasers operate at fundamental transverse mode due to a scattering loss mechanism. Threshold currents of 18 mA and stable single transverse mode operating at high currents are obtained.
Additional Information
Copyright © 1983 American Institute of Physics (Received 1 November 1982; accepted 23 November 1982) This work was supported by the Office of Naval Research and by the Air Force Office of Scientific Research.Files
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- 5176
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- CaltechAUTHORS:KORapl83a
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2006-10-04Created from EPrint's datestamp field
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