CaltechAUTHORS
Published May 14, 2013 | Version public
Journal Article Metadata-only

Structural and Optoelectronic Characterization of RF Sputtered ZnSnN_2

Creators

  • 1. ROR icon California Institute of Technology
  • 2. ROR icon University of California, Santa Barbara
  • 3. ROR icon ETH Zurich

Abstract

ZnSnN_2, a new earth-abundant semiconductor, is synthesized and characterized for use as a photovoltaic absorber material. Results confirm the predicted orthorhombic Pna2_1 crystal structure in RF sputtered thin films. Additionally, optical measurements reveal a direct bandgap of about 2 eV, which is larger than our calculated bandgap of 1.42 eV due to the Burstein-Moss effect.

Additional Information

© 2013 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim. Received: November 15, 2012; Revised: December 6, 2012; Published online: February 6, 2013. This work was supported in part by the US Department of Energy under grant DE-FG02-07ER46405, and in part by the DOW Chemical Company.

Additional details

Identifiers

Eprint ID
38832
DOI
10.1002/adma.201204718
Resolver ID
CaltechAUTHORS:20130606-102503382

Related works

Describes
10.1002/adma.201204718 (DOI)

Funding

Department of Energy (DOE)
DE-FG02-07ER46405
Dow Chemical Company

Dates

Created
2013-06-25
Created from EPrint's datestamp field
Updated
2021-11-09
Created from EPrint's last_modified field