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Published May 2003 | Published
Book Section - Chapter Open

Hydrogenation of Si from SiN_x: H films: how much hydrogen is really in the Si?


A promising method to introduce H into Si solar cells in order to passivate bulk defects is by the post-deposition annealing of an H-rich, SiN_x surface layer. It previously has been difficult to characterize the small concentration of H that is introduced by this method. IR spectroscopy has been used together with marker impurities in the Si to determine the concentration and depth of H introduced into Si from an annealed SiN_x film.

Additional Information

© 2003 IEEE. Issue Date: 18-18 May 2003; Date of Current Version: 28 June 2004. We thank Mark Rosenblum for his assistance with our experiments. Work performed at Lehigh University was supported by NREL Contract No. AAT-1-31606-04 and NSF Grant No. DMR-0108914.

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