Spin and valley-polarized multiple Fermi surfaces of α-RuCl₃/bilayer graphene heterostructure
Abstract
We report the transport properties of α-RuCl₃/bilayer graphene heterostructures, where carrier doping is induced by a work function difference, resulting in distinct electron and hole populations in α-RuCl₃ and bilayer graphene, respectively. Through a comprehensive analysis of multi-channel transport signatures, including Hall measurements and quantum oscillation, we unveil significant band modifications within the system. In particular, we observe the emergence of spin and valley-polarized multiple hole-type Fermi pockets, originating from the spin-selective band hybridization between α-RuC₃3 and bilayer graphene, breaking the spin degree of freedom. Unlike the α-RuCl₃/monolayer graphene system, the presence of different hybridization strengths between α-RuCl₃ and the top and bottom graphene layers leads to an asymmetric behavior of the two layers, confirmed by effective mass experiments, resulting in the manifestation of valley-polarized Fermi pockets. These compelling findings establish α-RuCl₃ proximitized to bilayer graphene as an outstanding platform for engineering its unique low-energy band structure.
Copyright and License
© 2023 Author(s). Published under an exclusive license by AIP Publishing.
Acknowledgement
This work was supported by the Basic Science Research Program NRF-2020R1C1C1006914, the DGIST R&D Program (23-CoE-NT-01) of the Korean Ministry of Science and ICT, the DGIST-Caltech collaboration research program (23-KUJoint-01), and Samsung electronics. K.W. and T.T. acknowledge support from the JSPS KAKENHI (Grant Nos. 20H00354, 21H05233, and 23H02052) and World Premier International Research Center Initiative (WPI), MEXT, Japan. J.K. was supported by the National Research Foundation of Korea funded by the Korea government (MSIT) (No. NRF-2022R1F1A1059616).
Contributions
Soyun Kim and Jeonghoon Hong contributed equally to this work.
Soyun Kim: Data curation (lead); Formal analysis (lead); Writing – original draft (supporting). Jeonghoon Hong: Data curation (equal); Formal analysis (equal); Methodology (equal); Writing – review & editing (equal). Kenji Watanabe: Funding acquisition (supporting); Resources (supporting). Takashi Taniguchi: Funding acquisition (supporting); Resources (supporting). Joseph Falson: Formal analysis (supporting); Funding acquisition (supporting); Writing – original draft (supporting). Jeongwoo Kim: Data curation (equal); Formal analysis (equal); Writing – original draft (equal). Youngwook Kim: Data curation (equal); Formal analysis (equal); Funding acquisition (equal); Project administration (equal); Writing – original draft (equal).
Data Availability
The data that support the findings of this study are available from the corresponding authors upon reasonable request.
Conflict of Interest
The authors have no conflicts to disclose.
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Additional details
- ISSN
- 1077-3118
- Ministry of Science and ICT
- 2020R1C1C1006914
- Ministry of Science and ICT
- 23-CoE-NT-01
- Ministry of Science and ICT
- 23-KUJoint-01
- Samsung (South Korea)
- Samsung electronics
- Japan Society for the Promotion of Science
- 20H00354
- Japan Society for the Promotion of Science
- 21H05233
- Japan Society for the Promotion of Science
- 23H02052
- National Research Foundation of Korea
- NRF-2022R1F1A1059616