CaltechAUTHORS
Published April 14, 1988 | Version public
Journal Article Open

High-speed front-illuminated GaInAsP/InP pin photodiode

Creators

Abstract

Describes a high-speed front-illuminated GaInAsP/InP pin photodiode for use at the optical wavelength of 1.3 μm. The device is grown on an n+-InP substrate and uses polyimide both as a passivation layer and as a bonding pad holder to reduce parasitic capacitance. An optoelectronic sampling measurement of the impulse response shows a pulsewidth (FWHM) of 28 ps. A 3 dB bandwidth in excess of 18 GHz has been achieved.

Additional Information

©1988 IEE. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the IEE.

Files

YIMel88.pdf

Files (232.0 kB)

Name Size Download all
md5:54243ea3b4d95dc6031f4224daa6bfe2
232.0 kB Preview Download

Additional details

Identifiers

Eprint ID
736
Resolver ID
CaltechAUTHORS:YIMel88

Related works

Describes
http://ieeexplore.ieee.org/iel1/2220/431/00008229.pdf (URL)

Dates

Created
2005-09-21
Created from EPrint's datestamp field
Updated
2019-10-02
Created from EPrint's last_modified field