Published September 15, 2007 | Version public
Journal Article Open

Ultralow-threshold Yb3+:SiO2 glass laser fabricated by the solgel process

Abstract

A Yb-doped silica microcavity laser on a silicon chip is fabricated from a solgel thin film. The high-Q microtoroid cavity, which has a finesse of 10,000, is evanescently coupled to an optical fiber taper. We report a threshold of 1.8 μW absorbed power that is, to the best of our knowledge, the lowest published threshold to date for any Yb-doped laser. The effect of Yb3+ concentration on laser threshold is experimentally quantified.

Additional Information

© 2007 Optical Society of America. Received July 5, 2007; accepted July 25, 2007; posted August 3, 2007 (Doc. ID 84873); published September 4, 2007. This work was financially supported by MURI grant FA9550-04-1-0434 and the Defense Advanced Research Projects Agency (DARPA) Center for Optofluidic Integration.

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Eprint ID
9176
Resolver ID
CaltechAUTHORS:OSTol07

Dates

Created
2007-11-09
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Updated
2020-03-09
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