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Published June 2011 | public
Journal Article

Fast Neutron Induced Nuclear Counter Effect in Hamamatsu Silicon PIN Diodes and APDs


Neutron induced nuclear counter effect in Hamamatsu silicon PIN diodes and APDs was measured by irradiating fast neutrons from a pair of ^(252)Cf sources directly to these devices. It was found that the entire kinetic energy of these neutrons may be converted into electron signals in these devices, leading to anomalous signals of up to a few million electrons in a single isolated calorimeter readout channel. Signals of such amplitude represent equivalent energy of several hundred GeV and a few GeV for PWO and LSO/LYSO crystals respectively assuming the corresponding light yields of 4 and 800 p.e./MeV. The overall rate of the neutron induced nuclear counter effect in APDs is found to be more than an order of magnitude less than that in PIN diodes. Increasing the APD gain was also found to reduce the neutron induced nuclear counter effect. An intelligent front-end chip capable of selecting un-contaminated signal is proposed to eliminate completely the nuclear counter effect without significant cost increase.

Additional Information

© 2011 IEEE. Manuscript received August 20, 2010; revised November 28, 2010; accepted March 12, 2011. Date of publication April 19, 2011; date of current version June 15, 2011. This work was supported in part by the U.S. Department of Energy under Grant DE-FG03-92-ER-40701 and in part by the U.S. National Science Foundation Award PHY-0612805. Many discussions with CMS and SuperB colleagues are acknowledged.

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