Quantum Hall effect on top and bottom surface states of topological insulator (Bi_(1−x)Sb_x)₂Te₃ films
Creators
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1.
University of Tokyo
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2.
Tohoku University
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3.
Japan Science and Technology Agency
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4.
RIKEN Center for Emergent Matter Science
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5.
Massachusetts Institute of Technology
Abstract
The three-dimensional topological insulator is a novel state of matter characterized by two-dimensional metallic Dirac states on its surface. To verify the topological nature of the surface states, Bi-based chalcogenides such as Bi₂Se₃, Bi₂Te₃, Sb₂Te₃ and their combined/mixed compounds have been intensively studied. Here, we report the realization of the quantum Hall effect on the surface Dirac states in (Bi_(1−x)Sb_x)₂Te₃ films. With electrostatic gate-tuning of the Fermi level in the bulk band gap under magnetic fields, the quantum Hall states with filling factor ±1 are resolved. Furthermore, the appearance of a quantum Hall plateau at filling factor zero reflects a pseudo-spin Hall insulator state when the Fermi level is tuned in between the energy levels of the non-degenerate top and bottom surface Dirac points. The observation of the quantum Hall effect in three-dimensional topological insulator films may pave a way toward topological insulator-based electronics.
Additional Information
© 2015 Macmillan Publishers Limited. Received 18 August 2014. Accepted 12 February 2015. Published 14 April 2015. R.Y. is supported by the Japan Society for the Promotion of Science (JSPS) through a research fellowship for young scientists. This research was supported by the Japan Society for the Promotion of Science through the Funding Program for World-Leading Innovative R & D on Science and Technology (FIRST Program) on 'Quantum Science on Strong Correlation' initiated by the Council for Science and Technology Policy and by JSPS Grant-in-Aid for Scientific Research(S) No. 24224009 and 24226002. This work was carried out by joint research of the Cryogenic Research Center, the University of Tokyo. Author Contributions: R.Y. performed thin films growth and device fabrication. R.Y., Y.K. and J.F. performed the low temperature transport measurements. R.Y. analysed the data and wrote the manuscript with contributions from all the authors. A.T., K.S.T., J.G.C., N.N., M.K. and Y.T. jointly discussed the results and guided the project. Y.T. conceived and coordinated the project. The authors declare no competing financial interests.Attached Files
Submitted - 1409.3326.pdf
Supplemental Material - 41467_2015_BFncomms7627_MOESM1387_ESM.pdf
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1409.3326.pdf
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Additional details
Identifiers
- Eprint ID
- 102316
- Resolver ID
- CaltechAUTHORS:20200403-115230763
Related works
- Describes
- https://arxiv.org/abs/1409.3326 (URL)
Funding
- Council for Science and Technology Policy (CSTP)
- Japan Society for the Promotion of Science (JSPS)
- 24224009
- Japan Society for the Promotion of Science (JSPS)
- 24226002
Dates
- Created
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2020-04-03Created from EPrint's datestamp field
- Updated
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2021-11-16Created from EPrint's last_modified field