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Published June 1976 | Published
Journal Article Open

Solid-state growth of Si to produce planar surfaces


Paralleling the sophisticated control of Si and GaAs growth from fluid media, we demonstrate control of Si growth using a solid growth medium. Faceted dissolution pits were first produced in a Si substrate using standard photolithographic techniques and Al metallization. Si was then evaporated onto the cold structure, depositing as amorphous material. Upon heating, the amorphous Si migrated through the solid Al and grew rapidly in the faceted pits, typically refilling them flush with the surrounding substrate. Evidence that the rapid growth occurs only while the amorphous Si is dissolving into the Al is presented.

Additional Information

Copyright © 1976 American Institute of Physics. Received 15 December 1975. The authors wish to thank J. Devaney and K. Evans for SEM photography, T.C. McGill for valuable discussions, and D. Lawson of JPL for providing Si wafers. Work supported in part by the Office of Naval Research and by NASA through the Jet Propulsion Laboratory.

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