Published June 1976
| Published
Journal Article
Open
Solid-state growth of Si to produce planar surfaces
- Creators
- Boatright, R. L.
- McCaldin, J. O.
Abstract
Paralleling the sophisticated control of Si and GaAs growth from fluid media, we demonstrate control of Si growth using a solid growth medium. Faceted dissolution pits were first produced in a Si substrate using standard photolithographic techniques and Al metallization. Si was then evaporated onto the cold structure, depositing as amorphous material. Upon heating, the amorphous Si migrated through the solid Al and grew rapidly in the faceted pits, typically refilling them flush with the surrounding substrate. Evidence that the rapid growth occurs only while the amorphous Si is dissolving into the Al is presented.
Additional Information
Copyright © 1976 American Institute of Physics. Received 15 December 1975. The authors wish to thank J. Devaney and K. Evans for SEM photography, T.C. McGill for valuable discussions, and D. Lawson of JPL for providing Si wafers. Work supported in part by the Office of Naval Research and by NASA through the Jet Propulsion Laboratory.Attached Files
Published - BOAjap76.pdf
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Additional details
- Eprint ID
- 11189
- Resolver ID
- CaltechAUTHORS:BOAjap76
- Office of Naval Research
- NASA
- Created
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2008-07-22Created from EPrint's datestamp field
- Updated
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2021-11-08Created from EPrint's last_modified field