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Published July 1978 | Published
Journal Article Open

Dissolution of amorphous silicon into solid aluminum


The rate of dissolution of amorphous Si into solid AI is measured at temperatures below 400°C. The dissolution rate is found to be much faster than predicted by a simple model of the transport of Si through AI. This result is related to defects in the growth of epitaxial Si using the solid-phase epitaxy process.

Additional Information

© 1978 American Vacuum Society. Received 24 January 1978; accepted 9 February 1978. The authors thank J. S. Best for his assistance with the heat treatments. Work was supported in part by the Office of Naval Research (L. Cooper) and the Army Research Office (H. Wittman).

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August 19, 2023
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