Welcome to the new version of CaltechAUTHORS. Login is currently restricted to library staff. If you notice any issues, please email coda@library.caltech.edu
Published October 1, 1982 | public
Journal Article Open

Recent developments in monolithic integration of InGaAsP/InP optoelectronic devices


Monolithically integrated optoelectronic circuits combine optical devices such as light sources (injection lasers and light emitting diodes) and optical detectors with solid-state semiconductor devices such as field effect transistors, bipolar transistors, and others on a single semiconductor crystal. Here we review some of the integrated circuits that have been realized and discuss the laser structures suited for integration with emphasis on the InGaAsP/InP material system. Some results of high frequency modulation and performance of integrated devices are discussed.

Additional Information

© Copyright 1982 IEEE. Reprinted with permission. Manuscript received April 1, 1982; revised June 4, 1982. This work was supported in part by the Office of Naval Research and the National Science Foundation (Optical Communication Program).


Files (1.5 MB)
Name Size Download all
1.5 MB Preview Download

Additional details

August 22, 2023
October 16, 2023