Band offsets in Si/Si1–x–yGexCy heterojunctions measured by admittance spectroscopy
Abstract
We have used admittance spectroscopy to measure conduction-band and valence-band offsets in Si/Si1–xGex and Si/Si1–x–yGexCy heterostructures grown by solid-source molecular-beam epitaxy. Valence-band offsets measured for Si/Si1–xGex heterojunctions were in excellent agreement with previously reported values. Incorporation of C into Si1–x–yGexCy lowers the valence- and conduction-band-edge energies compared to those in Si1–xGex with the same Ge concentration. Comparison of our measured band offsets with previously reported measurements of energy band gaps in Si1–x–yGexCy and Si1–yCy alloy layers indicate that the band alignment is Type I for the compositions we have studied and that our measured band offsets are in quantitative agreement with these previously reported results.
Additional Information
©1997 American Institute of Physics. (Received 19 December 1996; accepted 18 April 1997) The authors would like to acknowledge support from DARPA MDA972-95-3-0047 for work at UCSD, HRL, and ASU, and from ONR Grant No. N00014-95-1-0996 for work at UCSD. B.L.S. and E.T.Y. would also like to thank S. S. Lau for part of the equipment used in this work.Files
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2006-04-05Created from EPrint's datestamp field
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2021-11-08Created from EPrint's last_modified field