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Published February 1, 1993 | Published
Journal Article Open

Epitaxial Si films on Ge(100) grown via H/Cl exchange


Thin Si films have been grown isothermally on Ge(100) substrates using alternating exposures of Si2H6 and Si2Cl6, maintaining chlorine and hydrogen surface termination. At 465 °C, film growth rate is roughly 2 monolayer per cycle (one cycle equals 1 Si2H6 and 1 Si2Cl6 exposure). At 475 °C a uniform epitaxial film is obtained, while islanding is observed at higher T. This process is thermally activated and is not strictly self-limiting, but has certain desirable characteristics of atomic layer epitaxy growth.

Additional Information

© 1993 American Institute of Physics. Received 13 August 1992; accepted 25 November 1992. The authors thank J. Cotte for SIMS analysis. This work is supported by the Office of Naval Research under Contract No. N00014-91-C-0080.

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