Graphene−Graphite Oxide Field-Effect Transistors
Abstract
Graphene's high mobility and two-dimensional nature make it an attractive material for field-effect transistors. Previous efforts in this area have used bulk gate dielectric materials such as SiO_2 or HfO_2. In contrast, we have studied the use of an ultrathin layered material, graphene's insulating analogue, graphite oxide. We have fabricated transistors comprising single or bilayer graphene channels, graphite oxide gate insulators, and metal top-gates. The graphite oxide layers show relatively minimal leakage at room temperature. The breakdown electric field of graphite oxide was found to be comparable to SiO_2, typically ~1–3 × 10^8 V/m, while its dielectric constant is slightly higher, κ ≈ 4.3.
Additional Information
© 2012 American Chemical Society. Published In Issue March 14, 2012; Article ASAP: March 01, 2012; Received: August 16, 2011; Revised: January 31, 2012. We thank Chun Ning Lau for helpful discussions. M.B. acknowledges support from the ONR, GRC, NSF-NRI, NSFDMR 1106358, and ONR/DMEA H94003-10-2-1003.Attached Files
Supplemental Material - nl2028415_si_001.pdf
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Additional details
- Eprint ID
- 31347
- Resolver ID
- CaltechAUTHORS:20120508-104848198
- ONR
- GRC
- NSF-NRI
- NSF
- DMR 1106358
- ONR/DMEA
- H94003-10-2-1003
- Created
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2012-05-08Created from EPrint's datestamp field
- Updated
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2021-11-09Created from EPrint's last_modified field