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Published December 1, 2006 | Submitted + Published
Journal Article Open

Graded ferroelectric capacitors with robust temperature characteristics


Ferroelectric thin films offer the possibility of engineering the dielectric response for tunable components in frequency-agile rf and microwave devices. However, this approach often leads to an undesired temperature sensitivity. Compositionally graded ferroelectric films have been explored as a means of redressing this sensitivity, but experimental observations vary depending on geometry and other details. In this paper, we present a continuum model to calculate the capacitive response of graded ferroelectric films with realistic electrode geometries by accurately accounting for the polarization distribution and long-range electrostatic interactions. We show that graded c-axis poled BaxSr_(1−xT)iO_3 BST parallel plate capacitors are ineffective while graded a-axis poled BST coplanar capacitors with interdigitated electrodes are extremely effective in obtaining high and temperature-stable dielectric properties.

Additional Information

© 2006 American Institute of Physics. (Received 15 June 2006; accepted 19 August 2006; published online 13 December 2006) One of the authors (M.Y.E.) would like to acknowledge an Applied Materials graduate fellowship. This work was partially funded by the U.S. Department of Defense MURI award DAAD19-01-1-0517, administered by the Army Research Office. Author preprint, deposited 13 December 2006.

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Published - NAGjap06.pdf

Submitted - graded.pdf


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