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Published June 14, 2020 | public
Book Section - Chapter

Non-Epitxaial GaAs/Organic Heterojunction Solar Cells With 830mV Voc


We present a GaAs heterojunction solar cell that achieves 830mV Voc without any epitaxial processing or external doping on a bulk wafer and has an area of 10mm^2. The device consists of a bulk, n-type GaAs wafer with sulfur passivation, 10 nm of spun coat TCTA, an organic p-type semiconductor, 5 nm of of evaporated WO3, and a spun-coat film of highly-conductive PEDOT:PSS for lateral current transport. This achieved voltage paves the way for thin-film devices that can achieve 20% efficiency with only low-capital intensity processing. Additional results gleaned in achieving this voltage include: a robust, reliable, residue-free GaAs passivation process, discovering processing conditions compatible with the passivation for forming heterojunctions, and learning about the importance of lateral conduction in non-traditional heterostructure devices.

Additional Information

© 2020 IEEE. This material is based upon work primarily supported by the National Science Foundation (NSF) and the Department of Energy (DOE) under NSF CA No. EEC-1041895. Any opinions, findings and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect those of NSF or DOE.

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August 19, 2023
October 20, 2023