Published January 15, 1984
| Version public
Journal Article
Open
Self-confined metallic interconnects for very large scale integration
Creators
Abstract
A novel method to produce narrow metallic lines is presented. Lines of NiSi2 lithographically formed on SiO2 substrates are oxidized. The formed SiO2 layer consumes most of the Si from the silicide, leaving a metallic Ni line fully confined by SiO2. The associated problems together with the potential utilization are discussed.
Additional Information
Copyright © 1984 American Institute of Physics (Received 23 September 1983; accepted 24 October 1983) The authors wish to thank M. Van Rossum for the x-ray analysis, and Solid-State Devices, Inc. (A. Applebaum, President) for partial financial and technical support.Files
BARapl84a.pdf
Files
(209.5 kB)
| Name | Size | Download all |
|---|---|---|
|
md5:cd80244e699d4750983d2d11f49589cc
|
209.5 kB | Preview Download |
Additional details
Identifiers
- Eprint ID
- 3976
- Resolver ID
- CaltechAUTHORS:BARapl84a
Dates
- Created
-
2006-07-20Created from EPrint's datestamp field
- Updated
-
2021-11-08Created from EPrint's last_modified field