Hybrid Electrically Pumped Evanescent Si/InGaAsP Lasers
Hybrid Si/InGaAsP Fabry-Perot evanescent lasers are fabricated via wafer bonding. Compared with previous similar devices, the current threshold density, turn-on voltage, output power and slope efficiency are all improved. Images show modal confinement to Silicon.
Additional Information© 2009 Optical Society of America. This work has been supported by DARPA, under contract no. N66001-07-1-2058. The authors wish to thank the Kavli Nano-Institute, Caltech, for supporting the fabrication work. A. Z. thanks the support of post-doctoral fellowships from the Center for Physics in Information, Caltech, and the Rothschild foundation, Israel. M. S. thanks the support of the NSF Graduate Research Fellowship program.
Published - 05032694.pdf