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Published March 2009 | Published
Book Section - Chapter Open

Hybrid Electrically Pumped Evanescent Si/InGaAsP Lasers

Abstract

Hybrid Si/InGaAsP Fabry-Perot evanescent lasers are fabricated via wafer bonding. Compared with previous similar devices, the current threshold density, turn-on voltage, output power and slope efficiency are all improved. Images show modal confinement to Silicon.

Additional Information

© 2009 Optical Society of America. This work has been supported by DARPA, under contract no. N66001-07-1-2058. The authors wish to thank the Kavli Nano-Institute, Caltech, for supporting the fabrication work. A. Z. thanks the support of post-doctoral fellowships from the Center for Physics in Information, Caltech, and the Rothschild foundation, Israel. M. S. thanks the support of the NSF Graduate Research Fellowship program.

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