Published March 2009
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Hybrid Electrically Pumped Evanescent Si/InGaAsP Lasers
Abstract
Hybrid Si/InGaAsP Fabry-Perot evanescent lasers are fabricated via wafer bonding. Compared with previous similar devices, the current threshold density, turn-on voltage, output power and slope efficiency are all improved. Images show modal confinement to Silicon.
Additional Information
© 2009 Optical Society of America. This work has been supported by DARPA, under contract no. N66001-07-1-2058. The authors wish to thank the Kavli Nano-Institute, Caltech, for supporting the fabrication work. A. Z. thanks the support of post-doctoral fellowships from the Center for Physics in Information, Caltech, and the Rothschild foundation, Israel. M. S. thanks the support of the NSF Graduate Research Fellowship program.Attached Files
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Additional details
- Eprint ID
- 93671
- Resolver ID
- CaltechAUTHORS:20190308-150657267
- Defense Advanced Research Projects Agency (DARPA)
- N66001-07-1-2058
- Kavli Nanoscience Institute
- Caltech Center for Physics of Information
- Rothschild Foundation
- NSF Graduate Research Fellowship
- Created
-
2019-03-08Created from EPrint's datestamp field
- Updated
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2021-11-16Created from EPrint's last_modified field
- Caltech groups
- Kavli Nanoscience Institute