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Published November 1, 1975 | public
Journal Article Open

Interaction of Al layers with polycrystalline Si


Auger electron spectroscopy, MeV 4He + backscattering spectrometry and scanning electron microscopy have been used to investigate interactions between Al films and polycrystalline layers of CVD Si deposited on SiO2. Depth profiling techniques showed that intermixing of the Al and Si occurred in the 400–560 °C temperature range (i.e., below the eutectic). Dissolution of the poly Si into the Al film occurs followed by nucleation and growth of Si crystallites in the Al film. The morphology of the final structure depends on the relative thicknesses of the as-deposited Al and Si layers. In the case of the original Al thickness being greater than that of the Si, the Si forms large precipitates in the Al matrix. For Al layers thinner than those of the Si, a nearly continuous Si film is formed on the outer surface. The thickness of this final Si film is approximately that of the original Al layer. The remaining Si and the Al form a two-phase layer between the outer Si film and the SiO2 substrate.

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Copyright © 19756 American Institute of Physics Received 13 May 1975 The authors thnak Sylvanus S. Lau for his assistance with the x-ray diffraction pictures taken on a Read camera, and for his constructive participation throughout the investigation. They also acknowledge the help of Mototaka Kamoshida, Nippon Electric. Co., Ltd., Kawasaki, Japan, who provided poly Si samples. Work supported in part by National Science Foundation Grants MPS 74-05745 and DMR 72-03026 at the University of Illinois and in part by grants of the Ford Fuondation (T. Cole) and the Gulf Oil Foundation (A. Lewis, Jr.) at the California Institute of Technology.


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