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Published February 1966 | Reprint
Journal Article Open

Schottky Barrier Gate Field Effect Transistor

Mead, C. A. ORCID icon


An obvious addition to the ever-growing family of field-effect devices is a field-effect transistor with a Schottky barrier gate. It is the purpose of this correspondence 1) to demonstrate that indeed such a device does function as expected and 2) to point out several advantages of such a structure under certain circumstances. A schematic cross section of the device is shown in Fig. 1. The gate consists of a metal in intimate contact with the clean semiconductor surface. Clearly the ohmic contacts can be placed either on top of or under the semiconductor layer.

Additional Information

© 1966 IEEE. Manuscript received December 15, 1965. This work was supported in part by the Office of Naval Research, Washington, D.C. The author wishes to thank L. Bailey and E. Mehal for supplying the GaAs material used in these experiments.

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