Published July 1990
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Journal Article
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Submilliamp threshold InGaAs-GaAs strained layer quantum-well laser
Abstract
Strained-layer InGaAs-GaAs single-quantum-well buried-heterostructure lasers were fabricated by a hybrid beam epitaxy and liquid-phase epitaxy technique. Very low threshold currents, 2.4 mA for an uncoated laser (L=425 μm) and 0.75 mA for a coated laser (R~0.9, L=198 μm), were obtained. A 3-dB modulation bandwidth of 7.6 GHz was demonstrated at low bias current (14 mA). Procedures for material preparation and device fabrication are introduced.
Additional Information
© 1990 IEEE. Reprinted with permission. Manuscript received October 27, 1989; revised February 21, 1990. This work was supported by the Defense Advanced Research Projects Agency and the Office of Naval Research. The work of S. Sanders was supported by a National Science Foundation Graduate Fellowship. T.R. Chen would like to thank J. Paslaski for helpful discussions on high-frequency modulation. The authors are also grateful to D. Armstrong for his help in many ways during the LPE growth process.Attached Files
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Additional details
Identifiers
- Eprint ID
- 9937
- Resolver ID
- CaltechAUTHORS:CHEieeejqe90
Funding
- Defense Advanced Research Projects Agency (DARPA)
- Office of Naval Research (ONR)
- NSF Graduate Research Fellowship
Dates
- Created
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2008-03-27Created from EPrint's datestamp field
- Updated
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2021-11-08Created from EPrint's last_modified field